Hybrid integration is a promising technique to introduce on-chip laser devices to passive Silicon photonics chips. Hence, low-cost opto-electronic convergence becomes possible by integrating highly functional Si photonics devices together with the conventional CMOS circuitry. In the hybrid devices group, hybrid lasers (HLs) and semiconductor optical amplifiers (SOAs), operating at wavelenths near 1.55 µm, are designed and fabricated to catch up with the market demand for narrow-linewidth lasers for optical communications applications, and solid-state frequency-modulated continuous-wave (FMCW) light detection and ranging (LiDAR) for automotive applications. External cavity designs are utilized to reduced the linewidth by increasing photon storage in the passive part.
Electron-beam lithography (EBL) is used to pattern Si optical waveguides and devices before integration with Ⅲ-Ⅴ materials. For Ⅲ-Ⅴ/Si integration, both wafer-to-wafer and chip-to-wafer bonding techniques are studied to realize hybrid devices on a Si substrate. Plasma activated bonding (PAB) and fast atom beam bonding (FAB) technologies are utilized to bond the Ⅲ-Ⅴ and Si substrates. After bonding, Ⅲ-Ⅴ mesa patterning is performed by i-line stepper lithography to achieve better alignment accuracy with the underneath Si waveguide. A double-taper structure is used as an adiabatic mode converter to transfer light from the Ⅲ-Ⅴ mesa to the Si-waveguide. Laser measurement is performed using a laser diode tester equipment, while SOA measurement is performed using lensed fiber setup and a low-noise current source.
7F, S9-1, 2-12-1 O-okayama, Meguro-ku Tokyo 152-8552, Japan +81-3-5734-2555 ee.e titechnishiyama
Nishiyama lab. Student's room : South Bldg. 9 #701, #706, #707 |
Measurement room : South Bldg. 9 #604, #502, #201 |
Clean room : South Bldg. 9 #202, B1F Exposure house | Research Laboratory of Ultra-High Speed Electronics